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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2079 DESCRIPTION With TO-220F package DARLINGTON High DC current gain Low collector saturation voltage Complement to type 2SB1381 APPLICATIONS High power switching applications Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER TOR NDU ICO E SEM ANG INCH Emitter CONDITIONS VALUE 100 Collector-base voltage Open emitter Collector-emitter voltage Open base 100 7 5 8 0.5 Ta=25ae 2 Emitter-base voltage Collector current Collector current-peak Base current Open collector Fig.1 simplified outline (TO-220F) and symbol UNIT V V V A A A PC Collector dissipation TC=25ae 30 150 -55~150 ae ae W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=30mA ;IB=0 IC=3A ;IB=6mA IC=5A ;IB=20mA IC=3A ;IB=6mA VCB=100V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=3V IC=5A ; VCE=3V 2000 1000 MIN 100 2SD2079 SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V 1.5 2.5 2.5 100 2.5 15000 |I V V V A mA Switching times ton ts tf TOR NDU ICO E SEM ANG INCH Turn-on time Storage time 1.0 IB1=-IB2=6mA VCCO 30V ,RL=10| 4.0 Fall time 2.5 |I |I |I s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2079 TOR NDU ICO E SEM ANG INCH Fig.2 Outline dimensions 3 |
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